The barrier potential of a pn junction depends on which of the following factors?

The barrier potential of a pn junction is fundamentally determined by the type of semiconductor material used. When a p-type semiconductor, which has an abundance of holes, is joined with an n-type semiconductor, which has a surplus of electrons, a junction forms. The interaction between these two types of materials leads to the formation of a depletion region at the junction where charge carriers (electrons and holes) recombine, leading to a potential difference known as the barrier potential.

This barrier potential is influenced by the energy band structure of the specific semiconductor materials involved, such as silicon or germanium. Different materials have varying energy band gaps, which directly affects the height of the potential barrier that electrons need to overcome in order to move from the n-side to the p-side and vice versa. Therefore, the intrinsic properties of the semiconductors, like their doping levels and bandgap energies, play a crucial role in determining the magnitude of the barrier potential.

Factors such as light intensity, humidity, and air pressure do not significantly alter the fundamental properties of the semiconductor materials that create this junction. Light intensity may influence the behavior of the junction under certain conditions, such as in solar cells, but it does not change the inherent barrier potential. Similarly, humidity and air pressure relate